 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| M Features MCP1650/51/52/53 750 kHz Boost Controller Description The MCP1650/51/52/53 is a 750 kHz gated oscillator boost controller packaged in an 8 or 10-pin MSOP package. Developed for high-power, portable applications, the gated oscillator controller can deliver 5 watts of power to the load while consuming only 120 A of quiescent current at no load. The MCP1650/51/52/53 can operate over a wide input voltage range (2.0V to 5.5V) to accommodate multiple primary-cell and singlecell Li-Ion battery-powered applications, in addition to 2.8V, 3.3V and 5.0V regulated input voltages. An internal 750 kHz gated oscillator makes the MCP1650/51/52/53 ideal for space-limited designs. The high switching frequency minimizes the size of the external inductor and capacitor, saving board space and cost. The internal oscillator operates at two different duty cycles depending on the level of the input voltage. By changing duty cycle in this fashion, the peak input current is reduced at high input voltages, reducing output ripple voltage and electrical stress on power train components. When the input voltage is low, the duty cycle changes to a larger value in order to provide full-power capability at a wide input voltage range typical of battery-powered, portable applications. The MCP1650/51/52/53 was designed to drive external switches directly using internal low-resistance MOSFETs. Additional features integrated on the MCP1650/51/52/ 53 family include peak input current limit, adjustable output voltage/current, low battery detection and power-good indication. * Output Power Capability Over 5 Watts * Output Voltage Capability From 3.3V to Over 100V * 750 kHz Gated Oscillator Switching Frequency * Adaptable Duty Cycle for Battery or Wide-Input, Voltage-Range Applications * Input Voltage Range: 2.0V to 5.5V * Capable of SEPIC and Flyback Topologies * Shutdown Control with IQ < 0.1 A (Typical) * Low Operating Quiescent Current: IQ = 120 A * Voltage Feedback Tolerance (0.6%, Typical) * Popular MSOP-8 Package * Peak Current Limit Feature * Two Undervoltage Lockout (UVLO) Options: - 2.0V or 2.55V * Operating Temperature Range: -40C to +125C Applications * * * * * * * High-Power Boost Applications High-Voltage Bias Supplies White LED Drivers and Flashlights Local 3.3V to 5.0V Supplies Local 3.3V to 12V Supplies Local 5.0V to 12V Supplies LCD Bias Supply Package Types 8-Pin MSOP MCP1650 EXT GND CS FB 1 2 3 4 8 7 6 5 VIN NC NC SHDN EXT GND CS FB 8-Pin MSOP MCP1651 1 2 3 4 8 7 6 5 VIN LBO LBI SHDN 8-Pin MSOP MCP1652 EXT GND CS FB 1 2 3 4 8 7 6 5 VIN PG NC SHDN EXT GND CS FB NC 10-Pin MSOP 1 2 3 4 5 10 9 8 7 6 VIN PG LBO LBI SHDN 2004 Microchip Technology Inc. MCP1653 DS21876A-page 1 MCP1650/51/52/53 MCP1650 Block Diagram MCP1650 VIN Internal Osc. with 2 fixed Duty Cycles VDUTY + + 1R 0.122V 1.22V 9R ISNS Osc. Ref SoftStart ON/ OFF OSC. OUT Current Limit + VHIGH VREF - + VLOW SHDN ON/OFF Control S FB Voltage Feedback + DR Pulse Latch Q EXT - R VREF 1.22V DS21876A-page 2 - VLOW DC = 80% VIN < 3.8V DC = 56% VIN > 3.8V VHIGH VDUTY VIN CS GND VIN 2004 Microchip Technology Inc. MCP1650/51/52/53 MCP1651/2/3 Block Diagram MCP1650 - No Features MCP1651 - Low Battery Detection MCP1652 - Power Good Indication MCP1653 - Low Battery Detection and PG MCP1650/51/52/53 MCP1653 - LBI and PG Features MCP1651 - Low Battery Detection LBO Low Battery Comparator VIN LBI 1.22 Vref + - Vin SHDN VFB MCP1650 CS EXT GND Vref. (1.22V) MCP1652 - Power Good Indication VIN 85% of Vref + - PG + Power Good Comparators 115% of Vref A - 2004 Microchip Technology Inc. DS21876A-page 3 MCP1650/51/52/53 Timing Diagram MCP1650/1/2/3 Timing Diagram Osc S R Q DR EXT Latch Truth Table S 0 0 1 1 R 0 1 0 1 Q Qn 1 0 1 S Q R Q Typical Application Circuits 3.3V to 12V 100 mA Boost Converter RSENSE VIN 0.05 CS 3 1 EXT 4 FB 7 NC 10 k MOSFET/Schottky Boost Combination Device Inductor 3.3 H Input Voltage 3.3V 10% CIN 8 GND 2 SHDN 5 10 F NC 6 on off VOUT = 12V IOUT = 0 to 100 mA COUT 10 F Ceramic MCP1650 90.9 k DS21876A-page 4 2004 Microchip Technology Inc. MCP1650/51/52/53 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VIN TO GND........................................................... 6.0V CS,FB,LBI,LBO,SHDN,PG,EXT............ GND - 0.3V to VIN + 0.3V Current at EXT pin ................................................ 1A Storage temperature .......................... -65C to +150C Operating Junction Temperature........ -40C to +125C ESD protection on all pins ........................... 4 kV HBM DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High, TJ = -40C to +125C. Typical values apply for VIN = 3.3V, TA +25C. Parameters Input Characteristics Supply Voltage Undervoltage Lockout (S Option) Under Voltage Lockout (R Option) Undervoltage Hysteresis Shutdown Supply Current Quiescent Supply Current Soft Start Time Feedback Characteristics Feedback Voltage Feedback Comparator Hysteresis Feedback Input Bias Current Current Sense Input Current Sense Threshold Delay from Current Sense to Output Ext Drive EXT Driver ON Resistance (High Side) EXT Driver ON Resistance (Low Side) Oscillator Characteristics Switching Frequency Low Duty Cycle Switch-Over Voltage Duty Cycle Switch Voltage Hysteresis Low Duty Cycle High Duty Cycle FOSC VLowDuty DCHyst DCLOW DCHIGH 650 -- -- 50 72 750 3.8 92 56 80 850 -- -- 62 88 kHz V mV % % VIN rising edge RHIGH RLOW -- -- 8 4 18 12 ISNS-TH Tdly_ISNS 75 -- 114 80 155 -- mV ns VFB VHYS IFBlk 1.18 -- -50 1.22 12 -- 1.26 23 50 V mV nA VFB < 1.3V All conditions VIN UVLO UVLO UVLO HYST ISHD IQ TSS 2.7 2.4 1.85 -- -- -- -- -- 2.55 2.0 117 0.001 120 500 5.5 2.7 2.15 -- 1 220 -- V V V mV A A s SHDN = GND EXT = Open VIN rising edge VIN rising edge Sym Min Typ Max Units Conditions 2004 Microchip Technology Inc. DS21876A-page 5 MCP1650/51/52/53 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High, TJ = -40C to +125C. Typical values apply for VIN = 3.3V, TA +25C. Parameters Shutdown Input Logic High Input Logic Low Input Input Leakage Current Low Battery Threshold Low Battery Threshold Hysteresis Low Battery Input Leakage Current Low Battery Output Voltage Low Battery Output Leakage Current Time Delay from LBI to LBO VIN-HIGH VIN-Low ISHDN LBITH LBITHHYS ILBI VLBO ILBO TD_LBO 50 -- -- 1.18 95 -- -- -- -- -- -- 5 1.22 123 10 53 0.01 70 -- 15 100 1.26 145 -- 200 1 -- % of VIN % of VIN nA V mV nA mV A s VLBI = 2.5V ILB SINK = 3.2 mA, VLBI = 0V VLBI = 5.5V, VLBO = 5.5V LBI Transitions from LBITH + 0.1V to LBITH - 0.1V Referenced to Feedback Voltage Referenced to Feedback Voltage Referenced to Feedback Voltage (Both Low and High Thresholds) IPG SINK = 3.2 mA, VFB = 0V VFB Transitions from VFBTH + 0.1V to VFBTH -0.1V SHDN=VIN LBI Input falling (All Conditions) Sym Min Typ Max Units Conditions Low Battery Detect (MCP1651/MCP1653 Only) Power Good Output (MCP1652/MCP1653 Only) Power Good Threshold Low Power Good Threshold High Power Good Threshold Hysteresis Power Good Output Voltage Time Delay from V FB out of regulation to Power Good Output transition VPGTH-L VPGTH-H VPGTH-HYS VPGOUT TD_PG -20 +10 -- -- -- -15 +15 5 53 85 -10 +20 -- 200 -- % % % mV s TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High, TA = -40C to +125C. Typical values apply for VIN = 3.3V, TA = +25C. Parameters Temperature Ranges Storage Temperature Range Operating Junction Temperature Range Thermal Package Resistances Thermal Resistance, MSOP-8 Thermal Resistance, MSOP-10 JA JA -- -- 208 113 -- -- C/W Single-Layer SEMI G42-88 Board, Natural Convection C/W 4-Layer JC51-7 Standard Board, Natural Convection TA TJ -40 -40 -- -- +125 +125 C C Continuous Sym Min Typ Max Units Conditions DS21876A-page 6 2004 Microchip Technology Inc. MCP1650/51/52/53 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, C IN = 10 F (x5R or X7R Ceramic), COUT = 10 F (X5R or X7R), IOUT = 10 mA, L = 3.3 H, SHDN > VIH, TA = +25C. 200 175 150 125 100 75 50 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = +25C TJ = - 40C TJ = +125C 840 Input Quiescent Current (A) Oscillator Frequency (kHz) ILOAD = 0 mA 820 800 780 VIN = 5.5V 760 VIN = 4.1V 740 VIN = 2.7V 720 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 VIN = 2.0V Input Voltage (V) Ambient Temperature (C) FIGURE 2-1: Input Voltage. 200 175 Input Quiescent Current vs. FIGURE 2-4: Oscillator Frequency vs. Ambient Temperature. 3.85 Input Quiescent Current (A) Duty Cycle Switch Over Voltage (V) ILOAD = 0 mA VIN = 5.5V 3.84 3.83 3.82 3.81 3.80 3.79 3.78 3.77 3.76 3.75 -40 -25 -10 5 20 35 50 65 80 VIN = Rising 150 125 100 75 50 -40 -25 -10 VIN = 4.1V VIN = 2.7V VIN = 2.0V 5 20 35 50 65 80 95 110 125 95 110 125 Ambient Temperature (C) Ambient Temperature (C) FIGURE 2-2: Input Quiescent Current vs. Ambient Temperature. 800 FIGURE 2-5: Duty Cycle Switch-Over Voltage vs. Ambient Temperature. 94.0 Oscillator Frequency (kHz) Duty Cycle Switch Voltage Hysteresis (mV) 4.8 5.1 5.4 5.7 6 93.5 93.0 92.5 92.0 91.5 91.0 90.5 90.0 780 TJ = +25C 760 740 720 700 2.7 3 3.3 3.6 3.9 4.2 4.5 TJ = - 40C TJ = +125C -40 -25 -10 5 20 35 50 65 80 95 110 125 Input Voltage (V) Ambient Temperature (C) FIGURE 2-3: Input Voltage. Oscillator Frequency vs. FIGURE 2-6: Duty Cycle Switch-Over Hysteresis Voltage vs. Ambient Temperature. 2004 Microchip Technology Inc. DS21876A-page 7 MCP1650/51/52/53 Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 F (x5R or X7R Ceramic), COUT = 10 F (X5R or X7R), IOUT = 10 mA, L = 3.3 H, SHDN > VIH, TA = +25C. 1.0 1.230 1.225 ISINK EXT Sink/Source Current (A) TA = +25C 0.8 0.6 0.4 ISOURCE 0.2 0.0 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 VFB Voltage (V) TJ = +125C 1.220 1.215 1.210 1.205 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = - 40C TJ = +25C Input Voltage (V) Input Voltage (V) FIGURE 2-7: EXT Sink and Source Current vs. Input Voltage. 0.8 FIGURE 2-10: Voltage. 18 16 Feedback Voltage vs. Input EXT Sink/Source Current (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -25 -10 5 20 35 50 65 80 ISOURCE ISINK VIN = 3.3V VFB Hysteresis (mV) 14 12 10 8 6 4 2 0 TJ = - 40C TJ = +125C TJ = +25C 95 110 125 2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 Ambient Temperature (C) Input Voltage (V) FIGURE 2-8: EXT Sink and Source Current vs. Ambient Temperature. 80 FIGURE 2-11: Feedback Voltage Hysteresis vs. Input Voltage. EXT Rise / Fall Time (nS) 70 60 50 40 30 20 10 0 100 2.7VRISE 5V RISE 5V FALL 2.7VFALL 150 200 250 300 350 400 450 500 External Capacitance (pF) FIGURE 2-9: EXT Rise and Fall Times vs. External Capacitance. FIGURE 2-12: Dynamic Load Response. DS21876A-page 8 2004 Microchip Technology Inc. MCP1650/51/52/53 Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 F (x5R or X7R Ceramic), COUT = 10 F (X5R or X7R), IOUT = 10 mA, L = 3.3 H, SHDN > VIH, TA = +25C. 89 87 TA = 25C IOUT = 100 mA Efficiency (%) 85 83 81 79 77 75 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 Input Votlage (V) FIGURE 2-13: Dynamic Line Response. FIGURE 2-16: 90 85 Efficiency vs. Input Voltage. TA = 25C V IN = 3.3V Efficiency (%) 80 75 70 65 60 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 Load Current (mA) FIGURE 2-14: Voltage). Power-Up Timing (Input FIGURE 2-17: Efficiency vs. Load Current. 12.16 12.15 12.14 12.13 12.12 12.11 12.10 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 TA = 25C IOUT = 100 mA Output Voltage (V) 5.1 5.4 5.7 6.0 Input Voltage (V) FIGURE 2-15: (Shutdown). Power-Up Timing FIGURE 2-18: Output Voltage vs. Input Voltage (Line Regulation). 2004 Microchip Technology Inc. DS21876A-page 9 MCP1650/51/52/53 Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 F (x5R or X7R Ceramic), COUT = 10 F (X5R or X7R), IOUT = 10 mA, L = 3.3 H, SHDN > VIH, TA = +25C. 12.17 12.16 VIN = 3.3V 12.15 12.14 12.13 12.12 12.11 12.10 10 20 30 40 50 60 70 80 90 100 VIN = 4.3V 129 LBI Hysteresis Voltage (mV) TA = +25C 128 127 126 125 124 123 122 121 120 2 2.5 3 TJ = +125C Output Voltage (V) TJ = +25C TJ = - 40C 3.5 4 4.5 5 5.5 6 Output Current (mA) Input Votlage (V) FIGURE 2-19: Output Voltage vs. Output Current (Load Regulation). 0.26 0.24 FIGURE 2-22: Input Voltage. 250 LBI Hysteresis Voltage vs. LBO Output Voltage (mV) TA = +25C VOUT Ripple PK-PK (V) 0.22 0.20 0.18 0.16 0.14 0.12 0.10 2.7 3.0 3.3 3.6 3.9 200 150 100 TJ = +25C 50 0 TJ = - 40C TJ = +125C IOUT = 100mA 4.2 4.5 4.8 5.1 5.4 5.7 6.0 0 2 4 6 8 10 Input Voltage (V) LBO Sink Current (mA) FIGURE 2-20: Input Voltage. 1.230 Output Voltage Ripple vs. FIGURE 2-23: LBO Output Voltage vs. LBO Sink Current. LBI Threshold Voltage (V) 1.225 1.220 TJ = +125C TJ = +25C 1.215 1.210 1.205 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = - 40C Input Voltage (V) FIGURE 2-21: Input Voltage. LBI Threshold Voltage vs. FIGURE 2-24: LBO Output Timing. DS21876A-page 10 2004 Microchip Technology Inc. MCP1650/51/52/53 Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 F (x5R or X7R Ceramic), COUT = 10 F (X5R or X7R), IOUT = 10 mA, L = 3.3 H, SHDN > VIH, TA = +25C. Current Sense Threshold (mV) 20 15 10 5 0 -5 -10 -15 -20 2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 PGTH(LOW) PGTH(Hysteresis) 116 114 112 TJ = +125C 110 108 106 104 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = - 40C TJ = +25C PG Threshold and Hysteresis (% of VOUT) PGTH(HIGH) TA = 25C Input Voltage (V) Input Voltage (V) FIGURE 2-25: PG Threshold and Hysteresis Percentage vs. Input Voltage. 250 FIGURE 2-28: vs. Input Voltage. 20.0 Current Sense Threshold PG Ouput Voltage (mV) 200 150 100 50 0 0 2 4 6 8 10 TJ = - 40C TJ = +125C VEXT RON HIGH (Ohms) 16.0 TJ = +125C 12.0 8.0 4.0 0.0 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = - 40C TJ = +25C TJ = +25C PG Output Sink Current (mA) Input Voltage (V) FIGURE 2-26: Current. PG Output Voltage vs. Sink FIGURE 2-29: vs. Input Voltage. 8.0 VEXT High Output Voltage VEXT RON Low (Ohms) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = - 40C TJ = +25C TJ = +125C Input Voltage (V) FIGURE 2-27: PG Timing. FIGURE 2-30: vs. Input Voltage. VEXT Low Output Voltage 2004 Microchip Technology Inc. DS21876A-page 11 MCP1650/51/52/53 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Symbol EXT GND CS FB SHDN LBI LBO PG VIN External Gate Drive Ground Current Sense Feedback Input Shutdown Low Battery Input Low Battery Output Power Good Output Input Voltage Function Pin No. Pin No. Pin No. Pin No. MCP1650 MCP1651 MCP1652 MCP1653 1 2 3 4 5 -- -- -- 8 1 2 3 4 5 6 7 -- 8 1 2 3 4 5 -- -- 7 8 1 2 3 4 6 7 8 9 10 3.1 External Gate Drive (EXT) 3.6 Low Battery Input (LBI) EXT is the output pin that drives the external N-channel MOSFET on and off during boost operation. EXT is equal to GND for SHDN or UVLO conditions. LBI is the input pin for the low battery comparator. When the voltage on this pin falls below the nominal 1.22V threshold setting, the LBO (Low Battery Output) open-drain is active-low. 3.2 Circuit Ground (GND) Connect the GND pin to circuit ground. See layout guidelines for suggested grounding physical layout. 3.7 Low Battery Output (LBO) 3.3 Current Sense (CS) Input peak current is sensed on CS through the external current sense resistor. When the sensed current is converted to a voltage, the current sense threshold is 122 mV below VIN typical. If that threshold is exceeded, the pulse is terminated asynchronously. LBO is an active-low, open-drain output capable of sinking 10 mA when the LBI pin is below the threshold voltage. LBO is high-impedance during SHDN or UVLO conditions. 3.8 Power Good (PG) 3.4 Feedback Input (FB) Connect output voltage of boost converter through external resistor divider to the FB pin for voltage regulation. The nominal voltage that is compared to this input for pulse termination is 1.22V. PG is an active-high, open-drain output capable of sinking 10 mA when the FB input pin is 15% below its typical value or more than 15% above its typical value, indicating that the output voltage is out of regulation. PG is high impedance during SHDN or UVLO condition. 3.9 Input Voltage (VIN) 3.5 Shutdown Input (SHDN) VIN is an input supply pin. Tie 2.7V to 5.5V input power source. The SHDN input is used to turn the boost converter on and off. For normal operation, tie this pin high or to VIN. To turn off the device, tie this pin to low or ground. DS21876A-page 12 2004 Microchip Technology Inc. MCP1650/51/52/53 4.0 4.1 DETAILED DESCRIPTION Device Overview 4.3 Fixed Duty Cycle The MCP1650/51/52/53 is a gated oscillator boost controller. By adding an external N-channel MOSFET, schottky diode and boost inductor, high-output power applications can be achieved. The 750 kHz hysteretic gated oscillator architecture enables the use of small, low-cost external components. By using a hysteretic approach, no compensation components are necessary for the stability of the regulator output. Output voltage regulation is accomplished by comparing the output voltage (sensed through an external resistor divider) to a reference internal to the MCP1650/51/52/53. When the sensed output voltage is below the reference, the EXT pin pulses the external N-channel MOSFET on and off at the 750 kHz gated oscillator frequency. Energy is stored in the boost inductor when the external N-channel MOSFET is on and is delivered to the load through the external Schottky diode when the MOSFET is turned off. Several pulses may be required to deliver enough energy to pump the output voltage above the upper hysteretic limit. Once above the hysteretic limit, the internal oscillator is no longer gated to the EXT pin and no energy is transferred from input to output. The peak current in the MOSFET is sensed to limit its maximum value. As with all boost topology converters, even though the MOSFET is turned off, there is still a DC path through the boost inductor and diode to the load. Additional protection circuity, such as fuses, are recommended for short circuit protection. The MCP1650/51/52/53 family utilizes a unique twostep maximum duty cycle architecture to minimize input peak current and improve output ripple voltage for wide input voltage operating ranges. When the input voltage is below 3.8V, the duty cycle is typically 80%. For input voltages above 3.8V, the duty cycle is typically 56%. By decreasing the duty cycle at higher input voltages, the input peak current is reduced. For low input voltages, a longer duty cycle stores more energy during the ontime of the boost MOSFET. For applications that span the 3.8V input range, the inductor value should be selected to meet not only the minimum input voltage at 80% duty cycle, but 3.8V at 56% duty cycle as well. Refer to Section 5.0 "Application Circuits/Issues" for more information about selecting inductor values. 4.4 Shutdown Input Operation The SHDN pin is used to turn the MCP1650/51/52/53 on and off. When the SHDN pin is tied low, the MCP1650/51/52/53 is off. When tied high, the MCP1650/51/52/53 will be enabled and begin boost operation as long as the input voltage is not below the UVLO threshold. 4.5 Soft-Start Operation 4.2 Input Voltage When power is first applied to the MCP1650/51/52/53, the internal reference initialization is controlled to slow down the start-up of the boost output voltage.This is done to reduce high inrush current required from the source. High inrush currents can cause the source voltage to drop suddenly and trip the UVLO threshold, shutting down the converter prior to it reaching steadystate operation. The range of input voltage for the MCP1650/51/52/53 family of devices is specified from 2.7V to 5.5V. For the S-option devices, the undervoltage lockout (UVLO) feature will turn the boost controller off once the input voltage falls below 2.55V, typical. For the R-option devices, the UVLO is set to 2.0V. The R-option devices are recommended for use when "bootstrapping" the output voltage back to the input. The input of the MCP1650/51/52/53 device is supplied by the output voltage during boost operation. This can be used to derive output voltages from input voltages that start up at approximately 2V (2-cell alkaline batteries). 4.6 Gated Oscillator Architecture A 750 kHz internal oscillator is used as the base frequency of the MCP1650/51/52/53. The oscillator duty cycle is typically 80% when the input voltage is below a nominal value of 3.8V, and 56% when the input voltage is above a nominal value of 3.8V. Two duty cycles are provided to reduce the peak inductor current in applications where the input voltage varies over a wide range. High-peak inductor current results in undesirable high-output ripple voltages. For applications that have input voltage that cross this 3.8V boundary, both duty cycle conditions need to be examined to determine which one has the least amount of energy storage. Refer to Section 5.0 "Application Circuits/Issues" for more information about design considerations. 2004 Microchip Technology Inc. DS21876A-page 13 MCP1650/51/52/53 4.7 FB Pin 4.11 Low Battery Detect The output voltage is fed back through a resistor divider to the FB pin. It is then compared to an internal 1.22V reference. When the divided-down output is below the internal reference, the internal oscillator is gated on and the EXT pin pulses the external N-channel MOSFET on and off to transfer energy from the source to the load at 750 kHz. This will cause the output voltage to rise until it is above the 1.22V threshold, thereby gating the internal oscillator off. Hysteresis is provided within the comparator and is typically 12 mV. The rate at which the oscillator is gated on and off is determined by the input voltage, load current, hysteresis voltage and inductance. The output ripple voltage will vary depending on the input voltage, load current, hysteresis voltage and inductance. The Low-Battery Detect (MCP1651 and MCP1653 only) feature can be used to determine when the LBI input voltage has fallen below a predetermined threshold. The low-battery detect comparator continuously monitors the voltage on the LBI pin. When the voltage on the LBI pin is above the 1.22V + 123 mV hysteresis, the LBO pin will be high-impedance (opendrain). When in the high-impedance state, the leakage current into the LBO pin is typically less than 0.1 A. As the voltage on the LBI pin decreases and is lower than the 1.22V typical threshold, the LBO pin will transition to a low state and is capable of sinking up to 10 mA. 123 mV of hysteresis is provided to prevent chattering of the LBO pin as a result of battery input impedance and boost input current. 4.8 PWM Latch 4.12 Power Good Output The gated oscillator is self-latched to prevent double and sporadic pulsing. The reset into the latch is asynchronous and can terminate the pulse during the ontime of the duty cycle. The reset can be accomplished by the feedback voltage comparator or the current limit comparator. 4.9 Peak Inductor Current The external switch peak current is sensed on the CS pin across an optional external current sense resistor. If the CS pin falls more than 122 mV (typical) below VIN, the current limit comparator is set and the pulse is terminated. This prevents the current from getting too high and damaging the N-channel MOSFET. In the event of a short circuit, the switch current will be low due to the current limit. However, there is a DC path from the input through the inductor and external diode. This is true for all boost-derived topologies and additional protection circuitry is necessary to prevent catastrophic damage. The Power Good Output feature (MCP1652 and MCP1653 only) monitors the divided-down voltage feedback into the FB pin. When the output voltage falls more than 15% (typical) below the regulated set point, the power good (PG) output pin will transition from a high-impedance state (open-drain) to a low state capable of sinking 10 mA. If the output voltage rises more than 15% (typical) above the regulated set point, the PG output pin will transition from high to low. 4.13 4.13.1 Device Protection OVERCURRENT LIMIT 4.10 EXT Output Driver The Current Sense (CS) input pin is used to sense the peak input current of the boost converter. This can be used to limit how high the peak inductor current can reach. The current sense feature is optional and can be bypassed by connecting the VIN input pin to the CS input pin. Because of the path from input through the boost inductor and boost diode to output, the boost topology cannot support a short circuit without additional circuitry. This is typical of all boost regulators. The EXT output pin is designed to directly drive external N-channel MOSFETs and is capable of sourcing 400 mA (typical) and sinking 800 mA (typical) for fast on and off transitions. The top side of the EXT driver is connected directly to VIN, while the low side of the driver is tied to GND, providing rail-to-rail drive capability. Design flexibility is added by connecting an external resistor in series with the N-channel MOSFET to control the speed of the turn on and off. By slowing the transition speed down, there will be less highfrequency noise. Speeding the transition up produces higher efficiency. DS21876A-page 14 2004 Microchip Technology Inc. MCP1650/51/52/53 5.0 5.1 APPLICATION CIRCUITS/ ISSUES Typical Applications 5.1.1 NON-BOOTSTRAP BOOST APPLICATIONS The MCP1650/51/52/53 boost controller can be used in several different configurations and in many different applications. For applications that require minimum space, low cost and high efficiency, the MCP1650/51/ 52/53 product family is a good choice. It can be used in boost, buck-boost, Single-Ended Primary Inductive Converters (SEPIC), as well as in flyback converter topologies. Non-bootstrap applications are typically used when the output voltage is boosted to a voltage that is higher than the rated voltage of the MCP1650/51/52/53. For non-bootstrap applications, the input voltage is connected to the boost inductor through the optional current sense resistor and the VIN pin of the MCP1650/ 51/52/53. For this type of application, the S-option devices (UVLO at 2.55V, typical) should be used. The gated oscillator duty cycle will be dependant on the value of the voltage on VIN. If VIN > 3.8V, the duty cycle will be 56%. If VIN < 3.8V, the duty cycle will be 80%. In non-bootstrap applications, output voltages of over 100V can be generated. Even though the MCP1650/ 51/52/53 device is not connected to the high boost output voltage, the drain of the external MOSFET and reverse voltage of the external Schottky diode are connected. The output voltage capacitor must also be rated for the output voltage. 3.3V to 12V 100 mA Boost Converter RSENSE 0.05 VIN GND Input Voltage 3.3V 10% C IN 10 F off on SHDN 8 2 5 MCP1650 3 1 4 CS EXT FB 90.9 k COUT 10 F Ceramic MOSFET/Schottky Boost Combination Device Inductor 3.3 H VOUT = 12V IOUT = 0 to 100 mA NC 6 7 NC 10 k FIGURE 5-1: Typical Non-Bootstrap Application Circuit (MCP1650/51/52/53). 2004 Microchip Technology Inc. DS21876A-page 15 MCP1650/51/52/53 5.1.2 BOOTSTRAP BOOST APPLICATIONS For bootstrap configurations, the higher-regulated boost output voltage is used to power the MCP1650/ 51/52/53. This provides a constant higher voltage used to drive the external MOSFET. The R-option devices (UVLO < 2.0V) can be used for applications that need to start up with the input voltage below 2.7V. For this type of application, the MCP1650/51/52/53 will start off of the lower 2.0V input and begin to boost the output up to its regulated value. As the output rises, so does the input voltage of the MCP1650/51/52/53. This provides a solution for 2-cell alkaline inputs for output voltages that are less than 6V. Li-Ion Input to 5.0V 1A Regulated Output (Bootstrap) with MCP1652 Power Good Output Schottky Diode 3.3 H Vout = 5V Iout = 1A 10 VIN GND SHDN 8 2 5 MCP1652 3 CS N-Channel MOSFET 3.09 k Input Voltage 2.8V to 4.2V 0.1 F Cin 47 F off on 1 EXT 4 7 FB PG NC 6 Cout 47 F Ceramic 0.1 Shutdown Power Good Output 1 k FIGURE 5-2: 5.1.3 Bootstrap Application Circuit MCP1650/51/52/53. with the previous boost-converter applications, the SEPIC converter can be used in either a bootstrap or non-bootstrap configuration. The SEPIC converter can be a very popular topology for driving high-power LEDs. For many LEDs, the forward voltage drop is approximately 3.6V, which is between the maximum and minimum voltage range of a single-cell Li-Ion battery, as well as 3 alkaline or nickel metal batteries. SEPIC CONVERTER APPLICATIONS In many applications, the input voltage can vary above and below the regulated output voltage. A standard boost converter cannot be used when the output voltage is below the input voltage. In this case, the MCP1650/51/52/53 can be used as a SEPIC controller. A SEPIC requires 2 inductors or a single coupled inductor, in addition to an AC coupling capacitor. As Li-Ion Input to 3.6V 3W LED Driver (SEPIC Converter) 3.3 H 10 4.7 F Schottky Diode IOUT = 1A VIN GND SHDN 8 2 5 MCP1651 3 1 4 7 CS EXT FB PG 0.1 3W LED 0.2 N-Channel MOSFET 3.3 H 2.49 k COUT 47 F Ceramic Input Voltage 2.8V to 4.2V CIN 47 F 0.1 F off on NC 6 Dimming Capability Power Good Output 1 k FIGURE 5-3: DS21876A-page 16 SEPIC Converter Application Circuit MCP1650/51/52/53. 2004 Microchip Technology Inc. MCP1650/51/52/53 5.2 Design Considerations 5.2.1.1 Calculations P OUT = V O UT x I OU T Where: POUT = 12V X 100 mA POUT = 1.2 Watts P IN = P OU T ( Efficiency ) Where: PIN = 1.2W/80% (80% is a good efficiency estimate) PIN = 1.5 Watts For gated oscillator hysteretic designs, the switching frequency is not constant and will gate several pulses to raise the output voltage. Once the upper hysteresis threshold is reached, the gated pulses stop and the output will coast down at a rate determined by the output capacitor and the load. Using the gated oscillator switching frequency and duty cycle, it is possible to determine what the maximum boost ratio is for continuous inductor current operation. 1V O UT = ------------ x V IN 1 - D This relationship assumes that the output load current is significant and the boost converter is operating in Continuous Inductor Current mode. If the load is very light or a small boost inductance is used, higher boost ratio's can be achieved. Calculate at minimum VIN: 1 V OUTMAX = --------------- x 2.8 1 - 0.8 The ideal maximum output voltage is 14V. The actual measured result will be less due to the forward voltage drop in the boost diode, as well as other circuit losses. For applications where the input voltage is above and below 3.8V, another point must be checked to determine the maximum boost ratio. At 3.8V, the duty cycle changes from 80% to 56% to minimize the peak current in the inductor. 1 V OU TMAX = ------------------ x 3.8 1 - 0.56 For this case, VOUTMAX = 8.63V less than the required 12V output specified. The size of the inductor has to decrease in order to operate the boost regulator in Discontinuous Inductor Current mode. When developing switching power converter circuits, there are numerous things to consider and the MCP1650/51/52/53 family is no exception. The gated oscillator architecture does provide a simple control approach so that stabilizing the regulator output is an easier task than that of a fixed-frequency regulator. The MCP1650/51/52/53 controller utilizes an external switch and diode allowing for a very wide range of conversion (high voltage gain and/or high current gain). There are practical, as well as power-conversion, topology limitations. The MCP1650/51/52/53 gated oscillator hysteretic mode converter has similar limitations, as do fixed-frequency boost converters. 5.2.1 DESIGN EXAMPLE Input Voltage = 2.8V to 4.2V Output Voltage = 12V Output Current = 100 mA Oscillator Frequency = 750 kHz Duty cycle = 80% for VIN < 3.8V Duty cycle = 56% for VIN > 3.8V Setting the output voltage: V OU T R TO P = R BO T x ------------- - 1 V FB Where: RTOP = Top Resistor Value RBOT = Bottom Resistor Value By adjusting the external resistor divider, the output voltage of the boost converter can be set to the desired value. Due to the RC delay caused by the resistor divider and the device input capacitance, resistor values greater than 100 k are not recommended. The feedback voltage is typically 1.22V. For this example: RBOT = 10 k VOUT = 12V VFB = 1.22V RTOP = 88.4 k 90.9 K was selected as the closest standard value. 2004 Microchip Technology Inc. DS21876A-page 17 MCP1650/51/52/53 To determine the maximum inductance for Discontinuous Operating mode, multiply the energy going into the inductor every switching cycle by the number of cycles per second (switching frequency). This number must be greater than the maximum input power. The equation for the energy flowing into the inductor is given below. The input power to the system is equal to energy times time. 2 Energy = 1 x L x I PK -2 5.2.2 MOSFET SELECTION There are a couple of key consideration's when selecting the proper MOSFET for the boost design. A low R DSON logic-level N-channel MOSFET is recommended. 5.2.2.1 1. MOSFET Selection Process. The inductor peak current is calculated using the equation below: V IN I PK = -------- x T ON L Using a typical inductance of 3.3 H, the peak current in the inductor is calculated below: FSW = 750 kHz TON = (1/FSW * Duty Cycle) IPK (2.8V) = 905 mA Energy (2.8V) = 1.35 -Joules Power (2.8V) = 1.01 Watts At 3.8V and below, the converter can boost to 14V while operating in the Continuous mode. IPK (3.8V) = Energy at 3.8V Power = = 860 mA 1.22 -Joules 0.914 Watts 2. Voltage Rating - The MOSFET drain-to-source voltage must be rated for a minimum of VOUT + VFD of the external boost diode. For example, in the 12V output converter, a MOSFET drain-tosource voltage rating of 12V + 0.5V is necessary. Typically, a 20V part can be used for 12V outputs. Logic-Level RDSON - The MOSFET carries significant current during the boost cycle on time. During this time, the peak current in the MOSFET can get quite high. In this example, a SOT-23 MOSFET was used with the following ratings: VBDS = 20V (Drain Source Breakdown Voltage) IRLM2502 N-channel MOSFET RDSON = 50 milli-ohms (VGS = 2.5V) RDSON = 35 milli-ohms (VGS = 5.0V) QG = Total Gate Charge = 8 nC VGS = 0.6V to 1.2V (Gate Source Threshold Voltage) Selecting MOSFETs with lower RDSON is not always better or more efficient. Lower RDSON typically results in higher total gate charge and input capacitance, slowing the transition time of the MOSFET and resulting in increased switching losses. For this example, a 3.3 H inductor is too large, a 2.2 H inductor is selected. FSW = 750 kHz TON = (1/FSW * Duty Cycle) IPK (2.8V) = 1.36A Energy (2.8V) = 2.02 -Joules Power (2.8V) = 1.52 Watts IPK(3.8V) = 1.29A Energy at 3.8V = 1.83 -Joules Power = 1.4 Watts As the inductance is lowered, the peak current drawn from the input at all loads is increased. The best choice of inductance for high boost ratios is the maximum inductance value necessary while maintaining discontinuous operation. For lower boost-ratio applications (3.3V to 5.0V), a 3.3 H inductor or larger is recommended. In these cases, the inductor operates in Continuous Current mode. 5.2.3 DIODE SELECTION The external boost diode also switches on and off at the switching frequency and requires very fast turn-on and turn-off times. For most applications, Schottky diodes are recommended. The voltage rating of the Schottky diode must be rated for maximum boost output voltage. For example, 12V output boost converter, the diode should be rated for 12V plus margin. A 20V or 30V Schottky diode is recommended for a 12V output application. Schottky diodes also have low forward-drop characteristics, another desired feature for switching power supply applications. DS21876A-page 18 2004 Microchip Technology Inc. MCP1650/51/52/53 5.2.4 INPUT/OUTPUT CAPACITOR SELECTION 5.2.7 Inductors: Sumida(R) Corporation Coilcraft(R) BH Electronics Pulse Engineering(R) Coiltronics(R) Capacitors MuRata(R) Kemet(R) Taiyo-Yuden AVX (R) (R) EXTERNAL COMPONENT MANUFACTURES There are no special requirements on the input or output capacitor. For most applications, ceramic capacitors or low effective series resistance (ESR) tantalum capacitors will provide lower output ripple voltage than aluminum electrolytic. Care must be taken not to exceed the manufacturer's rated voltage or ripple current specifications. Low-value capacitors are desired because of cost and size, but typically result in higher output ripple voltage. The input capacitor size is dependant on the source impedance of the application. The hysteretic architecture of the MCP1650/51/52/53 boost converter can draw relatively high input current peaks at certain line and load conditions. Small input capacitors can produce a large ripple voltage at the input of the converter, resulting in unsatisfactory performance. The output capacitor plays a very important role in the performance of the hysteretic gated oscillator converter. In some cases, using ceramic capacitors can result in higher output ripple voltage. This is a result of the low ESR that ceramic capacitors exhibit. As shown in the application schematics, 100 milli-ohms of ESR in series with the ceramic capacitor will actually reduce the output ripple voltage and peak input currents for some applications. The selection of the capacitor and ESR will largely determine the output ripple voltage. http://www.sumida.com/ http://www.coilcraft.com http://www.bhelectronics.com http://www.pulseeng.com/ http://www.cooperet.com/ http://www.murata.com/ http://www.kemet.com/ http://www.taiyo-yuden.com/ http://www.avx.com/ MOSFETs and Diodes: International Rectifier Vishay(R)/Siliconix ON Semiconductor(R) Fairchild Semiconductor(R) http://www.irf.com/ http://www.vishay.com/company/brands/siliconix/ http://www.onsemi.com/ http://www.fairchildsemi.com/ 5.2.5 LOW BATTERY DETECTION For low battery detection, the MCP1651 or MCP1653 device should be used. The low-battery detect feature compares the low battery input (LBI) pin to the internal 1.22V reference. If the LBI input is below the LBI threshold voltage, the low battery output (LBO) pin will sink current (up to 10 mA) through the internal opendrain MOSFET. If the LBI input voltage is above the LBI threshold, the LBO output pin will be open or high impedance. 5.2.6 POWER GOOD OUTPUT For power good detection, the MCP1652 or MCP1653 device is ideal. The power good feature compares the voltage on FB pin to the internal reference (15%). If the FB pin is more than 15% above or below the power good threshold, the PG output will sink current through the internal open-drain MOSFET. If the output of the regulator is within 15% of the output voltage, the PG pin will be open or high-impedance. 2004 Microchip Technology Inc. DS21876A-page 19 MCP1650/51/52/53 6.0 TYPICAL LAYOUT MCP1651R (+2.8V to +4.8V Input to +5V Output @ 1A) TP1 +VIN_1 F1 FUSE 2A Power Train Path Coilcraft DO1813HC L1 3.3 H (R) TP2 +VOUT_1 D1 B330ADIC VR C1 47 VR +5V Output @ 1A TP3 GND Single-Cell Li-Ion Input (2.8V to 4.8V) TP4 GND C2 47 R5 73.2K R1 100 C3 0.1 8V 2 IN GND 6 LBI 5 /SHDN R2 49.9K CS EXT FB /LBO 3 1 4 7 Q1 3.09K IRLML2502 0 PGND R6 1K R7 562 R3 R4 0.1 AGND AGND 0 PGND R8 49.9K 0 0 PGND 0 MCP1651_MSOP TP5 /SHDN1 0 AGND 0 AGND D2 LED Low Input Keep Away From Switching Section FIGURE 6-1: MCP1650/51/52/53 Application Schematic. The feedback resistor divider that sets the output voltage should be considered sensitive and be routed away from the power-switching components discussed previously. As shown in the diagram, R6, R8 and the GND pin of the MCP1650/51/52/53 should be returned to an analog ground plane. The analog ground plane and power ground plane should be connected at a single point close to the input capacitor (C2). When designing the physical layout for the MCP1650/ 51/52/53, the highest priority should be placing the boost power train components in order to minimize the size of the high current paths. It is also important to provide ground-path separation between the large-signal power train ground and the small signal feedback path and feature grounds. In some cases, additional filtering on the VIN pin is helpful to minimize MCP1650/51/52/53 input noise. In this layout example, the critical power train paths are from input to output, +VIN_1 to F1 to C2 to L1 to Q 1 to GND. Current will flow in this path when the switch (Q1) is turned on. When Q 1 is turned off, the path for current flow will quickly change to +VIN_1 to F1 to L1 to D1 to C1 to R4 to GND. When starting the layout for this application, both of these power train paths should be as short as possible. The C2, Q1 and R4 GND connections should all be connected to a single "Power Ground" plane to minimize any wiring inductance. Bold traces are used to represent high-current connections and should be made as wide as is practical. R1 and C3 is an optional filter that reduces the switching noise on the VIN pin of the MCP1650/51/52/ 53. This should be considered for high-power applications (> 1W) and bootstrap applications where VIN of the MCP1650/51/52/53 is supplied by the output voltage of the boost regulator. DS21876A-page 20 2004 Microchip Technology Inc. MCP1650/51/52/53 Figure 6-2 represents the top wiring for the MCP1650/ 51/52/53 application shown. As shown in Figure 6-2, the high-current wiring is short and wide. In this example, a 1 oz. copper layer is used for both the top and bottom layers. The ground plane connected to C2 and R4 are connected through the vias (holes) connecting the top and bottom layer. The feedback signal (from TP2) is wired from the output of the regulator around the high current switching section to the feedback voltage divider and to the FB pin of the MCP1650/51/52/53. Figure 6-3 represents the bottom wiring for the MCP1650/51/52/53 application shown. Silk-screen reference designator labels are transparent from the top of the board. The analog ground plane and power ground plane are connected near the ground connection of the input capacitor (C2). This prevents high-power, ground-circulating currents from flowing through the analog ground plane. FIGURE 6-3: FIGURE 6-2: Top Layer Wiring. Bottom Layer Wiring. 2004 Microchip Technology Inc. DS21876A-page 21 MCP1650/51/52/53 7.0 7.1 PACKAGING INFORMATION Package Marking Information 8-Lead MSOP (MCP1650, MCP1651, MCP1652) Example: XXXXX YWWNNN 1650SE 0448256 10-Lead MSOP (MCP1653) Example: XXXXX YYWWNNN 1653SE 0448256 Legend: XX...X YY WW NNN Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard marking consists of Microchip part number, year code, week code, and traceability code. DS21876A-page 22 2004 Microchip Technology Inc. MCP1650/51/52/53 8-Lead Plastic Micro Small Outline Package (UA) (MSOP) E E1 p D 2 B n 1 A c A1 (F) A2 L 8 Number of Pins .026 BSC Pitch A .043 Overall Height A2 .030 .033 .037 Molded Package Thickness A1 .006 .000 Standoff E .193 TYP. Overall Width E1 .118 BSC Molded Package Width D .118 BSC Overall Length L .016 .024 .031 Foot Length Footprint (Reference) F .037 REF Foot Angle 0 8 c Lead Thickness .003 .006 .009 B .009 .012 .016 Lead Width 5 15 Mold Draft Angle Top 5 15 Mold Draft Angle Bottom *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. Units Dimension Limits n p MIN INCHES NOM MAX MIN MILLIMETERS* NOM 8 0.65 BSC 0.75 0.85 0.00 4.90 BSC 3.00 BSC 3.00 BSC 0.40 0.60 0.95 REF 0 0.08 0.22 5 5 - MAX 1.10 0.95 0.15 0.80 8 0.23 0.40 15 15 JEDEC Equivalent: MO-187 Drawing No. C04-111 2004 Microchip Technology Inc. DS21876A-page 23 MCP1650/51/52/53 10-Lead Plastic Micro Small Outline Package (UN) (MSOP) E E1 p D B n 2 1 c A2 A1 (F) L1 L A Number of Pins Pitch .043 Overall Height A Molded Package Thickness A2 .030 .037 Standoff A1 .000 .006 Overall Width E Molded Package Width E1 Overall Length D Foot Length L .016 .031 Footprint F 0 8 Foot Angle c .003 Lead Thickness .009 B .006 Lead Width .012 5 15 Mold Draft Angle Top 5 15 Mold Draft Angle Bottom *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MO-187 Drawing No. C04-021 Units Dimension Limits n p MIN INCHES NOM 10 .020 TYP .033 .193 BSC .118 BSC .118 BSC .024 .037 REF .009 - MAX MIN MILLIMETERS* NOM 10 0.50 TYP. 0.85 0.75 0.00 4.90 BSC 3.00 BSC 3.00 BSC 0.60 0.40 0.95 REF 0 0.08 0.15 0.23 5 5 MAX 1.10 0.95 0.15 0.80 8 0.23 0.30 15 15 DS21876A-page 24 2004 Microchip Technology Inc. MCP1650/51/52/53 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X UVLO Options X Temperature Range XX Package Examples: a) b) c) d) Device MCP1650: MCP1651: MCP1652: MCP1653: R S E MS UN 750 kHz Boost Controller 750 kHz Boost Controller 750 kHz Boost Controller 750 kHz Boost Controller MCP1650R-E/MS: MCP1650RT-E/MS: MCP1650S-E/MS: MCP1650ST-E/MS: 2.0V Option 2.0V Option, Tape and Reel 2.55V Option 2.55V Option, Tape and Reel 2.0V Option 2.0V Option, Tape and Reel 2.55V Option 2.55V Option, Tape and Reel 2.0V Option 2.0V Option, Tape and Reel 2.55V Option 2.55V Option, Tape and Reel 2.0V Option 2.0V Option, Tape and Reel 2.55V Option 2.55V Option, Tape and Reel a) b) c) d) MCP1651R-E/MS: MCP1651RT-E/MS: MCP1651S-E/MS: MCP1651ST-E/MS: UVLO Options = 2.0V = 2.55V = -40C to +125C Temperature Range Package a) b) c) d) MCP1652R-E/MS: MCP1652RT-E/MS: MCP1652S-E/MS: MCP1652ST-E/MS: = Plastic Micro Small Outline (MSOP), 8-lead = Plastic Micro Small Outline (MSOP), 10-lead a) b) c) d) MCP1653R-E/UN: MCP1653RT-E/UN: MCP1653S-E/UN: MCP1653ST-E/UN: Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2004 Microchip Technology Inc. DS21876A-page 25 MCP1650/51/52/53 NOTES: DS21876A-page 26 2004 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart and rfPIC are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartShunt and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, Select Mode, SmartSensor, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company's quality system processes and procedures are for its PICmicro(R) 8-bit MCUs, KEELOQ (R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 2004 Microchip Technology Inc. DS21876A-page 27 M WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com China - Beijing Unit 706B Wan Tai Bei Hai Bldg. No. 6 Chaoyangmen Bei Str. Beijing, 100027, China Tel: 86-10-85282100 Fax: 86-10-85282104 Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Chengdu Rm. 2401-2402, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 Singapore 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Atlanta 3780 Mansell Road, Suite 130 Alpharetta, GA 30022 Tel: 770-640-0034 Fax: 770-640-0307 Taiwan Kaohsiung Branch 30F - 1 No. 8 Min Chuan 2nd Road Kaohsiung 806, Taiwan Tel: 886-7-536-4818 Fax: 886-7-536-4803 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 China - Fuzhou Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 Taiwan Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 China - Hong Kong SAR Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 EUROPE Austria Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 China - Shanghai Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Denmark Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45-4420-9895 Fax: 45-4420-9910 China - Shenzhen Rm. 1812, 18/F, Building A, United Plaza No. 5022 Binhe Road, Futian District Shenzhen 518033, China Tel: 86-755-82901380 Fax: 86-755-8295-1393 Kokomo 2767 S. Albright Road Kokomo, IN 46902 Tel: 765-864-8360 Fax: 765-864-8387 France Parc d'Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 China - Shunde Room 401, Hongjian Building, No. 2 Fengxiangnan Road, Ronggui Town, Shunde District, Foshan City, Guangdong 528303, China Tel: 86-757-28395507 Fax: 86-757-28395571 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 China - Qingdao Rm. B505A, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao 266071, China Tel: 86-532-5027355 Fax: 86-532-5027205 Germany Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 San Jose 1300 Terra Bella Avenue Mountain View, CA 94043 Tel: 650-215-1444 Fax: 650-961-0286 India Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-22290061 Fax: 91-80-22290062 Italy Via Quasimodo, 12 20025 Legnano (MI) Milan, Italy Tel: 39-0331-742611 Fax: 39-0331-466781 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Japan Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Netherlands P. A. De Biesbosch 14 NL-5152 SC Drunen, Netherlands Tel: 31-416-690399 Fax: 31-416-690340 ASIA/PACIFIC Australia Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 United Kingdom 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44-118-921-5869 Fax: 44-118-921-5820 02/17/04 DS21876A-page 28 2004 Microchip Technology Inc. |
Price & Availability of MCP1650
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |